The report contains ten-year analysis with the following sections
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Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
double gate and tri-gate transistor formed on a bulk substrate and method for forming th… 🛈 | 21 | 2008 |
performance enhancement in pmos and nmos transistors on the basis of silicon/carbon mate… 🛈 | 14 | 2008 |
body contact for sram cell comprising double-channel transistors | 14 | 2008 |
a cmos device having gate insulation layers of different type and thickness and method o… 🛈 | 13 | 2007 |
a structured strained substrate for forming strained transistors with reduced thickness … 🛈 | 13 | 2008 |
a semiconductor device comprising a carbon based material for through hole vias | 13 | 2008 |
cmos device comprising mos transistors with recessed drain and source areas and non-conf… 🛈 | 12 | 2008 |
method for adjusting the height of a gate electrode in a semiconductor device | 12 | 2007 |
a transistor with an embedded strain inducing material having a gradually shaped configu… 🛈 | 11 | 2008 |
reduction of thickness variations of a threshold semiconductor alloy by reducing pattern… 🛈 | 11 | 2009 |