The report contains ten-year analysis with the following sections
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Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
a cmos device having gate insulation layers of different type and thickness and method o… 🛈 | 13 | 2007 |
threshold voltage adjustment in a fin transistor by corner implantation | 12 | 2011 |
a body controlled double channel transistor and circuits comprising the same | 11 | 2008 |
fin-transistor formed on a patterned sti region by late fin etch | 10 | 2011 |
reduced topography-related irregularities during the patterning of two different stress-… 🛈 | 10 | 2008 |
reduced defectivity in contacts of a semiconductor device comprising replacement gate el… 🛈 | 10 | 2010 |
protection of reactive metal surfaces of semiconductor devices during shipping by provid… 🛈 | 10 | 2011 |
superior integrity of high-k metal gate stacks by capping sti regions | 10 | 2011 |
semiconductor device comprising through hole vias having a stress relaxation mechanism | 9 | 2010 |
assessing metal stack integrity in sophisticated semiconductor devices by mechanically s… 🛈 | 9 | 2010 |