The report contains ten-year analysis with the following sections
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sandisk 3d | 2006 |
intermolecular | 219 |
toshiba corporation | 189 |
sandisk technologies | 146 |
sandisk corporation | 30 |
nanosys | 20 |
matrix semiconductor | 5 |
soken | 4 |
kishi hideki | 1 |
sandisk 3d. llc (us) | 1 |
sandisk 3d | 228 |
nanosys | 5 |
soken | 4 |
sandisk corporation | 4 |
matrix semiconductor | 2 |
sandisk technologies | 11 |
sandisk 3d | 1 |
Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
continuous mesh three dimensional non-volatile storage with vertical select devices | 71 | 2010 |
reverse set with current limit for non-volatile storage | 48 | 2008 |
composition of memory cell with resistance-switching layers | 42 | 2010 |
three-dimensional array of re-programmable non-volatile memory elements having vertical … 🛈 | 38 | 2009 |
methods and devices for forming nanostructure monolayers and devices including such mono… 🛈 | 36 | 2004 |
non-volatile memory having 3d array architecture with bit line voltage control and metho… 🛈 | 29 | 2012 |
high-density nonvolatile memory | 28 | 2002 |
resist feature and removable spacer pitch doubling patterning method for pillar structur… 🛈 | 22 | 2008 |
dense arrays and charge storage devices | 22 | 2000 |
methods of forming pillars for memory cells using sequential sidewall patterning | 20 | 2009 |