The report contains ten-year analysis with the following sections
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lattice power (jiangxi) corporation | 234 |
shineon (beijing) technology compa… 🛈 | 8 |
lattice power | 1 |
Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
method for obtaining high-quality boundary for semiconductor devices fabricated on a par… 🛈 | 9 | 2007 |
semiconductor light-emitting device with a highly reflective ohmic-electrode | 9 | 2008 |
semiconductor light-emitting device with double-sided passivation | 8 | 2008 |
method for manufacturing gallium nitride-based film chip | 8 | 2011 |
method for fabricating a low-resistivity ohmic contact to a p-type iii-v nitride semicon… 🛈 | 7 | 2007 |
gallium nitride light-emitting device with ultra-high reverse breakdown voltage | 7 | 2007 |
method for fabricating ingan-based multi-quantum well layers | 6 | 2008 |
method for fabricating robust light-emitting diodes | 5 | 2008 |
method for fabricating highly reflective ohmic contact in light-emitting devices | 5 | 2008 |
method for fabricating semiconductor light-emitting device with double-sided passivation | 5 | 2008 |