The report contains ten-year analysis with the following sections
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hangzhou silan azure company | 211 |
hangzhou silan microelectronics co… 🛈 | 12 |
hangzhou silan azure company | 6 |
Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
shower of large diameter mocvd reactor | 4 | 2011 |
semiconductor light emitting diode device and formation method thereof | 3 | 2012 |
epitaxial wafer edge grinding equipment | 2 | 2015 |
led substrate structure and manufacturing method thereof | 2 | 2014 |
method for manufacturing patterned sapphire substrate | 2 | 2012 |
bonding method for led (light-emitting diode) chip | 2 | 2012 |
double-light-beam exposure system and method for manufacturing photonic crystal mask lay… 🛈 | 2 | 2012 |
reverse led chip structure and manufacturing method thereof | 2 | 2014 |
led structure and manufacturing method thereof | 2 | 2014 |
patterned substrate, mask and patterned substrate manufacturing method | 2 | 2012 |