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force mos technology company | 1 |
Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
trench mosfet with trenched floating gates in termination | 17 | 2009 |
super-junction trench mosfet with resurf step oxide and the method to make the same | 10 | 2009 |
avalanche capability improvement in power semiconductor devices | 8 | 2010 |
trench mosfet structure having improved avalanche capability using three masks process | 7 | 2009 |
semiconductor devices with gate-source esd diode and gate-drain clamp diode | 6 | 2009 |
power semiconductor devices integrated with clamp diodes having separated gate metal pad… 🛈 | 6 | 2009 |
ldmos with double ldd and trenched drain | 6 | 2009 |
integrated trench mosfet with trench schottky rectifier | 6 | 2008 |
trench igbt with trench gates underneath contact areas of protection diodes | 5 | 2008 |
super-junction trench mosfets with short terminations | 5 | 2013 |