The report contains ten-year analysis with the following sections
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Title of patent family (most common patent title) |
Family members |
Filing year |
---|---|---|
schottky diode with buried layer in gan materials | 18 | 2011 |
method and system for a gan vertical jfet utilizing a regrown gate | 12 | 2011 |
high power gallium nitride electronics using miscut substrates | 8 | 2013 |
method and system for a gan vertical jfet utilizing a regrown channel | 8 | 2011 |
method and system for gallium nitride electronic devices using engineered substrates | 8 | 2012 |
vertical gan jfet with gate and source electrodes on regrown gate | 8 | 2011 |
method and system fabricating floating guard rings in gan materials | 8 | 2011 |
monolithically integrated vertical jfet and schottky diode | 8 | 2011 |
method of fabricating a merged p-n junction and schottky diode with regrown gallium nitr… 🛈 | 7 | 2013 |
method of fabricating a gallium nitride merged p-i-n schottky (mps) diode by regrowth an… 🛈 | 6 | 2012 |